Algan / gan hemt has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields Algan / ganhemt由于具有擊穿電壓高、電子漂移速度快和電子濃度大等特點,已被越來越多地應用于高頻及大功率領(lǐng)域。
Second , in luminescence materials hole or electron concentration will change with the doping content . so we expand the hole or electron concentration in taylor expansion and calculat the optimum doping contents . for several semiconductor materials such as zns : mn , silicon doped er and gaas , gap , gan doped different materials , we calculat their optimum doping contents which arc close to some experimental results 應用該表達式,給出了各種不同的制備方法zns摻mn 、硅基摻鉺、以及gaas 、 gap 、 gan摻不同元素制出的發(fā)光材料,對最佳摻雜含量進行了理論上的計算,理論計算值與實驗數(shù)據(jù)相符合。